A PIN photodiode array is the modification of a PN-junction for a specific application. This diode comes with a wide and undoped intrinsic semiconductor part between N-type and P-type semiconductor areas. Normally, these areas are heavily doped since they are utilized for ohmic contacts. A wide intrinsic area is an indifference to the ordinary p-n photodiode. This area makes the photodiode inferior rectifier, but it makes it ideal for quick switches, photosensors, attenuators and higher voltage electronic application.

What is a PIN Photodiode Array?

A PIN photodiode array is a form of a photosensor, utilized to transform optical signals into electrical signals. The PIN photodiodes comprise three parts, including the P, I and I region. Usually, the P & N regions are doped since they are used for Ohmic contacts. The intrinsic part in the photodiode is in contrast to a PN junction diode. This part makes the PIN photodiode a low rectifier, but it makes it ideal for quicker switches, photosensors, applications of higher voltage power devices and attenuators.

Structure and Working of a PIN Photodiode Array

The work PIN photodiode derives its name from the fact that it comprises three layers. Instead of having P and N-type layer, bit has 3 layers, including

• P-type
• Intrinsic
• N-type

The working mechanism of the PIN photodiode array is the same as the ordinary photodiode. The major dissimilarity is that the depletion area since that ordinary exists in the P and N areas in the reverse unbiased or biased photodiode is large. In all PN junction diodes, the P area comprises holes since it has been doped to ensure that it has many holes. On the other hand, the N part has been hoped to hold more electrons.

Application of PIN Photodiode Array

The applications of the PIN photodiode array comprises:

• The PIN photodiode is utilized as a higher voltage rectifier. The intrinsic layer of the photodiode provides a barrier between the layers, allowing high reverse voltage to be allowed.
• The photodiode is utilized as a perfect radio frequency switch since the intrinsic layer between the P and N layer increases the space between the two. Additionally, this lessens the capacitance between the two parts, hence increasing the level of isolation when the PIN photodiode is reverse biased.
• PIN photodiode array is utilized as a photosensor to change the light into a current that occurs in a depletion layer of a photodiode. This raises the depletion layer by inserting the intrinsic layer, evolving the performance by raising the volume where light changes take place.
• This photodiode array is a perfect component to offer electronics swapping in the application of electronics. In most cases, it’s used in RF design application and offering the switching or the attenuating component in RF switches and RF attenuators. PIN photodiode array can offer a higher level of consistency than the RF relay that is the only alternative

These are some of the primary applications of a PIN photodiode array, even though they can be applied in other places.